Increased Perpendicular TMR in FeCoB/MgO/FeCoB Magnetic Tunnel Junctions by Seedlayer Modifications
Increased Perpendicular TMR in FeCoB/MgO/FeCoB Magnetic Tunnel Junctions by Seedlayer Modifications
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DOI：
10.1109/tmag.2013.2242448
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发表时间：
2013-07
影响因子：
2.1
通讯作者：
V. Sokalski;D. Bromberg;M. Moneck;E. Yang;J. Zhu
中科院分区：
文献类型：
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作者：
V. Sokalski;D. Bromberg;M. Moneck;E. Yang;J. Zhu
通过修改垂直FeCoB/MgO/FeCoB磁隧道结（MTJs）中的种子层，我们观察到最大隧道磁电阻（TMR）从65%增加到138%。研究发现，降低Ta/Ru/Ta衬底中的Ta沉积速率可以在保持垂直易轴的同时提高退火温度（高达350℃）。在较低温度下，两个种子层保持垂直的FeCoB易轴，也可以看到改进，这表明TMR的增加不仅仅与高温退火有关。
By modifying the seedlayer in perpendicular FeCoB/MgO/FeCoB magnetic tunnel junctions (MTJs), we observe an increase in maximum tunneling magnetoresistance (TMR) from 65% up to 138%. It's found that decreasing the Ta deposition rate in Ta/Ru/Ta underlayers allows for greater annealing temperatures (up to 350 ) while still maintaining a perpendicular easy axis. An improvement is also seen at a lower temperature where both seedlayers maintain a perpendicular FeCoB easy axis indicating that the increase in TMR is not solely related to annealing at a higher temperature.