Low Noise Terahertz-Wave Detection by Fermi-Level Managed Barrier Diode
Low Noise Terahertz-Wave Detection by Fermi-Level Managed Barrier Diode
复制标题
通过费米级管理势垒二极管进行低噪声太赫兹波检测
DOI：
10.1117/12.2635218
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发表时间：
2022
期刊：
影响因子：
--
通讯作者：
H. Ito and T. Ishibashi
中科院分区：
文献类型：
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作者：
伊藤涼音;孫 津韜;日景 隆;東山潤司;大西輝夫;H. Ito and T. Ishibashi
我们提出了我们最近开发的宽带和低噪声太赫兹波探测器称为费米能级管理势垒（FMB）二极管。FMB二极管具有约100 meV的非常低的势垒高度，这对于在零偏置条件下实现低噪声等效功率（NEP）至关重要。所制造的具有前置放大器的模块可以在直接检测模式下检测频率范围从160 GHz到1.4 THz的信号，在300 GHz下具有非常低的3 x 10- 12 W/kHz的NEP。在混频（外差）检测模式下，集成宽带互谐放大器的FMB二极管模块在300 GHz附近的中频带宽为36 GHz，NEP为3 × 10- 19 W/Hz，本振功率仅为70 μW。我们还开发了由100和128 FMB二极管组成的线性探测器阵列，用于实际的太赫兹波成像。
We present our recent development of a broadband and low-noise THz-wave detector called the Fermi-level managed barrier (FMB) diode. The FMB diode has a very low barrier height of around 100 meV, which is essential for attaining low noise-equivalent power (NEP) under a zero-biased condition. The fabricated module with a pre-amplifier could detect signals in a frequency range from 160 GHz to 1.4 THz with a very low NEP of 3 x 10-12W/√Hz at 300 GHz in the direct detection mode. In the mixing (heterodyne) detection mode, an FMB diode module integrating a broadband transimpedance amplifier exhibited an intermediate frequency bandwidth of 36 GHz and an extremely low NEP of 3 x 10-19W/Hz at around 300 GHz with a local oscillator power of only 70 μW. We also developed linear detector arrays consisting of 100 and 128 FMB diodes for practical THz-wave imaging.