Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain
Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain
复制标题
通过单轴应变下的圆形光电效应探测 GaN 基异质结构中的 Rashba 和 Dresselhaus 自旋轨道耦合
DOI：
10.1063/1.3511768
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发表时间：
2010-11-01
影响因子：
4
通讯作者：
Yu, Jinling
中科院分区：
文献类型：
--
作者：
Yin, Chunming;Shen, Bo;Yu, Jinling
利用单轴应变下的循环光电流效应实验研究了GaN基异质结中的自旋劈裂。测量了不同Al组分的AlxGa_（1-x）N/GaN异质结的Rashba和Dresselhaus自旋轨道耦合系数（R/D）比值。结果表明，当Al组分从15%增加到36%时，R/D比从4.1增加到19.8。实验获得的GaN体的Dresselhaus系数为0.4 eV埃（3）。结果表明，极化诱导电场可以有效地调制GaN基异质结中的自旋劈裂。
The spin splitting in GaN-based heterostructures has been investigated by means of circular photogalvanic effect experiments under uniaxial strain. The ratios of Rashba and Dresselhaus spin-orbit coupling coefficients (R/D ratios) have been measured in AlxGa1-xN/GaN heterostructures with various Al compositions. It is found that the R/D ratio increases from 4.1 to 19.8 with the Al composition of the AlxGa1-xN barrier varied from 15% to 36%. The Dresselhaus coefficient of bulk GaN is experimentally obtained to be 0.4 eV angstrom(3). The results indicate that the spin splitting in GaN-based heterostructures can be modulated effectively by the polarization-induced electric fields.