InGaAs-Schottky contacts made by in situ plated and evaporated Pt - An analysis based on DC and noise characteristics
InGaAs-Schottky contacts made by in situ plated and evaporated Pt - An analysis based on DC and noise characteristics
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DOI：
10.1109/16.658666
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发表时间：
1998-02-01
影响因子：
3.1
通讯作者：
Hong, K
中科院分区：
文献类型：
--
作者：
Marsh, P;Pavlidis, D;Hong, K
电镀与蒸发 Pt 肖特基阳极形成技术的选择对 InGaAs 混频二极管的结质量和噪声温度有显着影响，所研究的二极管层是通过金属有机气相外延 (MOVPE) 在 S.I. InP 晶圆上内部生长的。对于直径等于或小于 2 μm 的阳极，电镀阳极明显显示出相对于蒸发阳极（低于大约 5%）的优良制造（类似于 80%）良率，比较了作为直流电流驱动的函数的电镀与蒸发 InGaAs 肖特基接触在 10 Hz-100 KHz 和 1.4 GHz 下对于 4- 和 6-μm 阳极直径的直流和低频/高频噪声特性。电镀阳极的理想因子明显较低，约为 1.2，而蒸发阳极的理想因子约为 1.4-1.66，电镀肖特基触点在 10 Hz-100 KHz 范围内的噪声水平降低了 5.5 dB，在 1.4 GHz 时噪声温度较低（220 K 与 360 K）。总体而言，相对于传统的蒸发 Pt，电镀 Pt 阳极技术提供了卓越的制造良率，并且应该会带来更高的接收器灵敏度，尤其是在使用低 IF 频率时。
The choice of plated versus evaporated Pt Schottky anode formation technology is shown to have a significant impact on junction quality and the noise temperature of InGaAs mixer diodes, The investigated diode layers were grown in-house via Metalorganic Vapor Phase Epitaxy (MOVPE) on an S.I. InP wafer. For anode diameters at and below 2 mu m, plated anodes clearly show superior fabrication (similar to 80%) yields relative to evaporated (below similar to 5%), DC and low-/high-frequency noise characteristics were compared, as functions of dc current drive, for plated versus evaporated InGaAs Schottky contacts at 10 Hz-100 KHz and 1.4 GHz for 4- and 6- mu m anode diameters. Plated anodes show distinctly lower ideality factors of similar to 1.2 versus similar to 1.4-1.66 for evaporated anodes, Plated Schottky contacts showed 5.5 dB lower noise levels in the range of 10 Hz-100 KHz and a lower noise temperature (220 K versus 360 K) at 1.4 GHz. Overall, relative to conventional evaporated Pt, plated Pt anode technology offers superior fabrication yield and should lead to higher receiver sensitivity especially when low IF frequencies are used.