Ambipolar Oxide Thin-Film Transistor
Ambipolar Oxide Thin-Film Transistor
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DOI：
10.1002/adma.201101410
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发表时间：
2011-08-09
影响因子：
29.4
通讯作者：
Hosono, Hideo
中科院分区：
文献类型：
--
作者：
Nomura, Kenji;Kamiya, Toshio;Hosono, Hideo
第一双极氧化物为基础的薄膜晶体管（TFT）使用一个氧化锡沟道，演示了由两个双极氧化锡TFT配置的互补型反相器的操作。对于p沟道和n沟道模式，分别获得类似于0.8和类似于5 × 10（-4）cm（2）V-1 s（-1）的饱和迁移率，并且反相器显示出类似于2.5的最大电压增益。这是第一次使用单个氧化物半导体沟道演示类似互补的电路，并向实用氧化物电子学迈出了重要一步。
The first ambipolar oxide-based thin-film transistor (TFT) using an SnO channel is presented, demonstrating operation of a complementary-like inverter configured by two ambipolar SnO TFTs. Saturation mobilities of similar to 0.8 and similar to 5 x 10(-4) cm(2) V-1 s(-1) are obtained for the p-channel and n-channel modes, respectively, and the inverter shows a maximum voltage gain of similar to 2.5. This is the first demonstration of a complementary-like circuit using a single oxide semiconductor channel and provides an important step toward practical oxide electronics.