Correlation of surface morphology and photoluminescence fluctuation in green light emitting InGaN/GaN quantum wells
Correlation of surface morphology and photoluminescence fluctuation in green light emitting InGaN/GaN quantum wells
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绿光发射InGaN/GaN量子阱表面形貌与光致发光涨落的相关性
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
J. Wagner
中科院分区：
文献类型：
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作者：
J. Danhof;C. Vierheilig;U. Schwarz;T. Meyer;M. Peter;B. Hahn;M. Maier;J. Wagner
对于InGaN/GaN多量子阱结构的表面形貌和光致发光波动的相关性已建立通过比较原子力显微镜图像与PL测量相同的区域。两个分析的样品同时生长，但在不同的衬底上，因此具有不同的位错密度。它们的PL峰波长在510 nm和520 nm之间。通过微光致发光（μPL）对两个样品观察到的曲折结构是在GaN衬底上的样品不是由穿透位错产生的情况下。螺纹位错可能会影响曲折结构的发展，但不会导致曲折结构的发展（© 2009 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
For InGaN/GaN multiple quantum well structures a correlation of surface morphology and photoluminescence fluctuations has been established by comparing atomic force microscopy images with PL measurements of the same area. The two analyzed samples were grown simultaneously, but on different substrates and therefore with different dislocation densities. Their PL peak wave lengths lie in between 510 nm and 520 nm. Meandering structures observed for both samples by micro– photoluminescence (μPL) are in the case of the sample on GaN substrate not created by threading dislocations. Threading dislocations may influence the development of meandering structures but do not cause them (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)