Heat treatment induced redistribution of vanadium in semi‐insulating GaAs:V
Heat treatment induced redistribution of vanadium in semi‐insulating GaAs:V
复制标题
热处理诱导半绝缘 GaAs:V 中钒的重新分布
DOI：
10.1063/1.94650
复制
发表时间：
1984
影响因子：
4
通讯作者：
E. Bauser
中科院分区：
文献类型：
--
作者：
W. Kütt;D. Bimberg;M. Maier;H. Kräutle;F. Köhl;E. Bauser
利用二次离子质谱法比较了钒在V掺杂高电阻率块状生长GaAs、V掺杂GaAs离子中、以及在不同热退火工艺下生长在V掺杂衬底上的高纯外延层中的重分布和扩散。研究的热过程是典型的砷化镓集成电路技术。在所有研究的情况下，V的扩散比Cr小一个数量级。因此，从热稳定性的角度来看，V掺杂的GaAs衬底应该优于Cr掺杂的衬底，也可能优于目前所谓的含有1016 cm−3 EL2补偿器的“未掺杂”衬底。
The redistribution and diffusion of vanadium in V‐doped high resistivity bulk as‐grown GaAs, in V‐doped GaAs ion implanted with V, and in high purity epitaxial layers grown on top of V‐doped substrates upon various thermal annealing processes are compared to that of Cr using secondary ion mass spectrometry. The thermal processes studied are typical for GaAs IC technology. V diffuses by one order of magnitude less than Cr in all cases investigated. Thus, from thermal stability point of view V‐doped GaAs substrates should be superior to Cr‐doped ones and probably also to the present so‐called ‘‘undoped’’ ones containing 1016 cm−3 EL2 compensators.