Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structures
Nonvolatile memory operations of metal-ferroelectric-insulator-semiconductor (MFIS) FETs using PLZT/STO/Si(100) structures
复制标题
DOI：
10.1109/55.563315
复制
发表时间：
1997-04
影响因子：
4.9
通讯作者：
E. Tokumitsu;R. Nakamura;H. Ishiwara
中科院分区：
文献类型：
--
作者：
E. Tokumitsu;R. Nakamura;H. Ishiwara
我们报道了采用PLZT/STO/Si（100）结构的p沟道金属-铁电-绝缘体-半导体（MFIS）-FET的制造和表征，并演示了MFIS FET的非易失性存储器操作。结果表明，由于PLZT薄膜的铁电特性，PLZT/STO/Si MFIS-FET的I/sub D/-V/sub G/特性曲线呈现出明显的电滞回线。它还表明，I/子D/可以控制的“写”脉冲，这是应用之前的测量，即使在相同的“读”栅极电压。
We report fabrication and characterization of p-channel metal-ferroelectric-insulator-semiconductor (MFIS)-FETs using the PLZT/STO/Si(100) structures and demonstrate nonvolatile memory operations of the MFIS FETs. It is found that I/sub D/-V/sub G/ characteristics of PLZT/STO/Si MFIS-FET's show a hysteresis loop due to the ferroelectric nature of the PLZT film. It is also demonstrated that the I/sub D/ can be controlled by the "write" pulse, which was applied before the measurements, even at the same "read" gate voltage.