Two-dimensional materials for electronic applications
Two-dimensional materials for electronic applications
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DOI：
10.1557/mrs.2014.138
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发表时间：
2014-08-01
期刊：
影响因子：
5
通讯作者：
Schwierz, Frank
中科院分区：
文献类型：
--
作者：
Lemme, Max C.;Li, Lain-Jong;Schwierz, Frank
本文综述了石墨烯和相关二维（2D）材料在微电子和纳米电子学中的应用潜力。除了石墨烯，特别强调的是过渡金属二硫属化物（TMD）。首先，我们讨论了应用规模的材料生长，特别是化学气相沉积的潜在解决方案。我们描述了2D材料的电接触和电介质界面的挑战。本综述中与器件相关的部分首先权衡了半金属石墨烯作为场效应晶体管（FET）沟道材料用于逻辑和射频应用的利弊。随后介绍了替代石墨烯开关概念，这些概念利用了材料的特定特性，即隧道FET、垂直器件和双层赝自旋FET。最后一节专门介绍半导体TMD及其在FET中的集成，以n型二硫化钼（MoS2）和p型二硒化钨（WSe2）为例。
This article reviews the potential of graphene and related two-dimensional (2D) materials for applications in micro- and nanoelectronics. In addition to graphene, special emphasis is placed on transition metal dichalcogenides (TMDs). First, we discuss potential solutions for application-scale material growth, in particular chemical vapor deposition. We describe challenges for electrical contacts and dielectric interfaces with 2D materials. The device-related sections in this review first weigh the pros and cons of semi-metal graphene as a field-effect transistor (FET) channel material for logic and radio frequency applications. This is followed by an introduction to alternate graphene switch concepts that utilize the particular properties of the material, namely tunnel FETs, vertical devices, and bilayer pseudospin FETs. The final section is dedicated to semiconducting TMDs and their integration in FETs using the examples of n-type molybdenum disulfide (MoS2) and p-type tungsten diselenide (WSe2).