Transition from unipolar to bipolar, multilevel switching, abrupt and gradual reset phenomena in a TaN/CeO2/Ti: /Pt memory devices
Transition from unipolar to bipolar, multilevel switching, abrupt and gradual reset phenomena in a TaN/CeO2/Ti: /Pt memory devices
复制标题
DOI：
10.1016/j.materresbull.2019.04.028
复制
发表时间：
2019-09
影响因子：
5.4
通讯作者：
A. M. Rana;M. Ismail;Tahira Akber;M. Nadeem;Sungjun Kim
中科院分区：
文献类型：
--
作者：
A. M. Rana;M. Ismail;Tahira Akber;M. Nadeem;Sungjun Kim
我们报告了 TaN/CeO2/Ti:/Pt 存储器件中从单极到双极开关的转变、多级电阻开关、突然和逐渐复位现象。通过改变设定过程中的电流顺应性，可以成功获得多级电阻开关。据观察，在设定过程中增加电流顺应值会降低器件的设定电压，并分别降低低电阻和高电阻状态。此外，我们还观察到 Ta/CeO2/Ti:/Pt 存储单元中突然和逐渐复位转变的共存。该器件表现出优异的双极电阻开关特性，例如耐久性能、器件间可变性 (D2D) 和良好的保持时间 104s。 TaN 顶部电极的氧化与 CeO2 薄膜形成欧姆接触，从而将带正电的氧空位注入切换层，该层似乎负责电阻切换。
We report the transition from unipolar to bipolar switching, multilevel resistive switching, abrupt and gradual reset phenomena in a TaN/CeO2/Ti: /Pt memory devices. Multilevel resistive switching can be successfully obtained by varying the current compliance in the set process. It was observed that increasing the value of current compliance during the set process decreases the set voltages of the devices and as well as deceases the low and high resistance states, respectively. In addition, we have also observed coexistence of abrupt and gradual reset transition in a Ta/CeO2/Ti: /Pt memory cell. The device exhibits the excellent bipolar resistive switching characteristics such as endurance performance, device-to-device variability (D2D) and good retention time 104s. The oxidation of the TaN top electrode creates an Ohmic contact with CeO2film and hence injects positively charged oxygen vacancies into the switching layer which looks to be responsible for resistive switching.