Multi-section quantum dot superluminescent diodes for spectral shape engineering
Multi-section quantum dot superluminescent diodes for spectral shape engineering
复制标题
用于光谱形状工程的多节量子点超发光二极管
DOI：
10.1049/iet-opt.2008.0023
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发表时间：
2009
影响因子：
1.6
通讯作者：
R. Hogg
中科院分区：
文献类型：
--
作者：
P. Judson;K. Groom;D. Childs;M. Hopkinson;R. Hogg
描述了一种新型多接触量子点超辐射二极管的设计和工作参数，并与单接触器件进行了比较。这种装置允许发射功率和光谱形状的独立调谐，因此光学相干层析成像的穿透深度和分辨率是解耦的。利用啁啾量子点的器件的发射光谱被调谐，以产生以1050 nm所需波长为中心的宽带单高斯发射，其输出功率比单接触器件高。
The design and operating parameters of a novel multi-contact quantum dot superluminescent diode incorporating a number of features which inhibit lasing are described and compared with that of a single-contact device. Such devices allow the independent tuning of emission power and spectral shape; hence the penetration depth and resolution in optical coherence tomography are decoupled. The emission spectrum of a device utilising chirped quantum dots is shown to be tuned to produce a broadband single Gaussian emission, centred at the required wavelength of 1050 nm, at higher output powers than a single-contact device.