Excitons Localized in Mesoscopic Domains Produced by Stacking Fault In Bil3
Excitons Localized in Mesoscopic Domains Produced by Stacking Fault In Bil3
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Bil3 中堆垛层错产生的激子局域于介观域
DOI：
10.1080/10587259208047012
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发表时间：
1992
影响因子：
0.7
通讯作者：
T. Karasawa
中科院分区：
文献类型：
--
作者：
T. Komatsu;T. Iida;K. Murayama;M. Ichida;H. Kurisu;H. Kondo;I. Akai;T. Karasawa
本文研究了BiI_3中间接边以下的吸收线系列WJ（J=I，II，III，…）。该系列被分配到限制在介观域的层状材料的变形故障特性所产生的激子。每条谱线由四种结构组成，分别对应于x+iy、x-iy、z和源自体阳离子激子的纯三重态。这四个态之间的能量分离依赖于其中限制激子的介观畴的大小。通过引入介观畴的盘状模型，根据阳离子激子的各向异性量子尺寸效应对实验结果进行了分析。激子的相对运动被发现是强烈的影响，在垂直于限制轴的方向上的平移运动的本地化。
Abstract Absorption line series WJ(J=I,II,III,…) appeared below the indirect, edge in BiI3 has been studied. The series is assigned to the excitons confined in mesoscopic domains produced by deformation faults characteristic of layered materials. Each line consists of four structures which correspond to x+iy, x-iy, z, and pure triplet states originated from the bulk cationic excitons. The energy separations between these four states are depend on the size of mesoscopic domains in which an exciton is confined. By introducing a disk-like shape model of the mesoscopic domain, the experimental results are analyzed on the basis of anisotropic quantum size effects on the cationic excitons. The relative motion of the exciton is found to be strongly affected by the localization of the translational motion in the direction perpendicular to the confinement axis.