Role of Q-carbon in nucleation and formation of continuous diamond film
Role of Q-carbon in nucleation and formation of continuous diamond film
复制标题
DOI：
10.1016/j.carbon.2021.02.049
复制
发表时间：
2021-05
期刊：
影响因子：
10.9
通讯作者：
J. Narayan;A. Bhaumik;Siddharth Gupta;P. Joshi;P. Riley;R. Narayan
中科院分区：
文献类型：
--
作者：
J. Narayan;A. Bhaumik;Siddharth Gupta;P. Joshi;P. Riley;R. Narayan
由于缺乏金刚石生长所需的金刚石成核位点，在实际基底上形成连续和粘附的金刚石膜提出了一个艰巨的挑战。这个问题已经解决，通过形成的界面Q-碳层的纳秒激光熔化的碳层在一个高度过冷状态和随后的淬火。Q-碳层为平面匹配衬底（例如蓝宝石）上的外延膜和非晶衬底（例如玻璃）上的多晶膜提供现成的成核位点。每个激光脉冲转换约一平方厘米的面积，这可以用100-200 Hz的激光重复，以产生潜在的100-200 cm 2s-1的金刚石膜。这基本上是一种低温处理，其中衬底保持接近环境温度，因为总热量输入相当小。Q-碳层还负责改善金刚石膜在蓝宝石和玻璃基板上的粘附性。还认为，Q-碳层的形成也是负偏压MPCVD金刚石沉积过程中有效的金刚石成核的原因。
Formation of continuous and adherent diamond films on practical substrates presents a formidable challenge due to lack of diamond nucleation sites needed for diamond growth. This problem has been solved through the formation of interfacial Q-carbon layers by nanosecond laser melting of carbon layers in a highly undercooled state and subsequent quenching. The Q-carbon layer provides ready nucleation sites for epitaxial films on planar matching substrates such as sapphire, and polycrystalline films on amorphous substrates such as glass. Each laser pulse converts about a one-cm-square area, which can be repeated with a 100–200 Hz laser to produce potentially 100–200 cm2s-1of diamond films. This is essentially a low-temperature processing, where substrate stays close to ambient temperature, because the total heat input is quite small. The Q-carbon layer is also responsible for improved adhesion of diamond films on sapphire and glass substrates. It is also argued that the formation of Q-carbon layer is also responsible for efficient diamond nucleation during negatively biased MPCVD diamond depositions.