In-situ monitoring of GaN crystal growth by the Na-flux method via electrical resistance measurement
In-situ monitoring of GaN crystal growth by the Na-flux method via electrical resistance measurement
复制标题
通过电阻测量通过钠通量法原位监测 GaN 晶体生长
DOI:
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发表时间:
2021
期刊:
影响因子:
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通讯作者:
Masashi Yoshimura and Yusuke Mori
中科院分区:
文献类型:
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作者:
Koichi Itozawa;Ricksen Tandryo;Kosuke Murakami;Masayuki Imanishi;Shigeyoshi Usami;Mihoko Maruyama;Masashi Yoshimura and Yusuke Mori