Excellent electric properties of free-standing InAs membranes
Excellent electric properties of free-standing InAs membranes
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独立式 InAs 膜具有优异的电性能
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
S. Miyashita
中科院分区：
文献类型：
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作者：
H. Yamaguchi;R. Dreyfus;Y. Hirayama;S. Miyashita
我们利用InAs/GaAs异质结制备的InAs薄膜制备了高长细比、最小厚度为50 nm、典型长度为几十微米的半导体自支撑梁和霍尔棒结构。这些结构在没有任何故意掺杂的情况下表现出明显的导电性。我们通过标准的霍尔测量得到了载流子浓度和迁移率，从而证实了这两个参数都比生长的异质结样品大得多。这些结果表明，该材料体系在微/纳机电系统中具有广阔的应用前景。
We fabricated semiconducting free-standing-beam and Hall-bar structures with a high slenderness ratio, a minimum thickness of 50 nm, and a typical length of several tens of microns using InAs membranes processed from InAs/GaAs heterostructures. These structures showed clear electric conductivity without any intentional doping. We obtained the carrier concentration and mobility by means of standard Hall measurements, thus confirming that both parameters were much larger than those of as-grown heterostructure samples. These results indicate that this material system is promising for micro/nanoelectromechanical system applications.