Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices
Defect Characterization, Imaging, and Control in Wide-Bandgap Semiconductors and Devices
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DOI：
10.1007/s11664-018-6214-9
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发表时间：
2018-09-01
影响因子：
2.1
通讯作者：
Allen, M. W.
中科院分区：
文献类型：
--
作者：
Brillson, L. J.;Foster, G. M.;Allen, M. W.
宽带隙半导体现在正引领着纳米尺度的新物理现象和器件应用。缺陷对这些材料的电子性质的影响随着其尺寸的减小而增加，这激发了新的技术来表征和开始控制这些电子态。引领这些进步的是半导体材料氧化锌、氮化镓及相关材料。本文强调了这些半导体中原生点缺陷的重要性，并描述了三维空间局域表面科学和光谱技术的补充如何在纳米尺度上表征、成像和开始控制这些电子态。包括深度分辨阴极发光光谱、表面光电压谱和高光谱成像在内的表征技术的组合可以描述体相和纳米尺度表面的界面、金属界面以及纳米结构内部的缺陷的性质和分布。这些特征以及宽禁带器件结构内部纳米级的温度和机械应变即使在这些器件运行时也可以测量到。这些先进的能力为在纳米级描述缺陷提供了几个新的方向，展示了它们如何导致设备退化，并指导生长过程来控制它们。
Wide-bandgap semiconductors are now leading the way to new physical phenomena and device applications at nanoscale dimensions. The impact of defects on the electronic properties of these materials increases as their size decreases, motivating new techniques to characterize and begin to control these electronic states. Leading these advances have been the semiconductors ZnO, GaN, and related materials. This paper highlights the importance of native point defects in these semiconductors and describes how a complement of spatially localized surface science and spectroscopy techniques in three dimensions can characterize, image, and begin to control these electronic states at the nanoscale. A combination of characterization techniques including depth-resolved cathodoluminescence spectroscopy, surface photovoltage spectroscopy, and hyperspectral imaging can describe the nature and distribution of defects at interfaces at both bulk and nanoscale surfaces, their metal interfaces, and inside nanostructures themselves. These features as well as temperature and mechanical strain inside wide-bandgap device structures at the nanoscale can be measured even while these devices are operating. These advanced capabilities enable several new directions for describing defects at the nanoscale, showing how they contribute to device degradation, and guiding growth processes to control them.