Disilyl Bis(Secondary Amine)-Enabled Epoxy Ring-Opening and Silylotropic N -> O Migration Leading to Low Dielectric Epoxy Copolymers
Disilyl Bis(Secondary Amine)-Enabled Epoxy Ring-Opening and Silylotropic N -> O Migration Leading to Low Dielectric Epoxy Copolymers
复制标题
二甲硅烷基双(仲胺)引发的环氧开环和甲硅烷基N-O迁移导致低介电环氧共聚物
DOI:
10.1021/acs.macromol.1c01002
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发表时间:
2021
期刊:
影响因子:
5.5
通讯作者:
Zhang Aidong
中科院分区:
文献类型:
--
作者:
Duan Jiang;Mei Caihong;Wu Wenli;Rao Li;Fan Heping;Tang Yiwen;Zhang Aidong
This work presents a strategy for fabricating low dielectric epoxy copolymers through copolymerizing bisphenol A diglycidyl ether withN,N′-disilyl bis(secondary amine)s, a series of difunctional silylamines synthesized by silylation of bis(secondary amine)s. A study on the model reaction of monoepoxy with monofunctional silylamines identified that the reaction proceeded smoothly in tetrahydrofuran with Mg(ClO4)2catalysis and mechanistically through sequential silylamine-induced epoxy ring-opening and silylotropic N → O migration, a process with favorable Gibbs free energy changes as confirmed by density functional theory calculations. The copolymers demonstrated remarkably low dielectric constants and dielectric losses due to the formation of the low-polarizable silyloxyl instead of the hydroxyl group in polymerization and the enlarged molecular free volume. In addition, the copolymers showed desirable toughness, hydrophobicity, and thermal stability. As a tool to achieve these desirable features, the strategy developed in this work may find promising application in designing low dielectric epoxy resin materials for use in the microelectronic field.