X-ray luminescence and characteristics of potassium-doped cesium iodide film
X-ray luminescence and characteristics of potassium-doped cesium iodide film
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DOI：
10.1016/j.optmat.2024.115021
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发表时间：
2024-02-05
影响因子：
3.9
通讯作者：
Hsu，Jin-Cherng
中科院分区：
文献类型：
--
作者：
Wu，Hsing-Yu;Shen，Li -Siang;Hsu，Jin-Cherng
研究了热真空共蒸发法制备的未掺杂和钾掺杂的碘化铯(CSI)薄膜的结构和发光特性。用X射线衍射仪(X射线衍射仪)、场发射扫描电子显微镜(FE-SEM)、能谱仪(EDS)、X射线荧光光谱和X射线光电子能谱(XPS)对薄膜进行了表征。K掺杂后，晶体的主要取向由(200)晶面转变为(110)晶面。在X射线激发下，K掺杂的CsI薄膜的缺陷相关发光光谱在380~600 nm处出现一个宽峰。值得注意的是，掺杂2wt%KI的样品显示出最高的发光效率。最后，XPS分析揭示了Cs-I和多个I-离子的结合能。这一观察结果表明，除了传统的CSI离子晶体结构外，还存在包括F-、H-和VK-中心的晶体缺陷。
This study delves into the structural and luminescent properties of un-doped and potassium (K) doped cesium iodide (CsI) thin films fabricated by thermal vacuum co-evaporation. These films were characterized by aspects of X-ray diffraction (XRD) patterns, field emission scanning electron microscopy (FE-SEM) images, energy-dispersive X-ray spectroscopy (EDS), X-ray luminescence spectra, and X-ray photoelectron spectroscopy (XPS). The predominant crystal orientation changed from the (200) plane to the (110) one after K-doping. Upon X-ray excitation, the defect-related luminescence spectra of K-doped CsI films unveiled a broad peak from 380 to 600 nm in the region. Notably, the sample doped with 2 wt% of KI exhibited the highest luminescence efficiency. Finally, XPS analysis disclosed the binding energies associated with Cs–I and multiple-I ions. This observation suggested the existence of crystal defects, including F-, H-, and Vk-centers, in addition to the conventional CsI ionic crystal structure.