Quality Factor Dependence on the Inactive Regions in AlN Contour-Mode Resonators
Quality Factor Dependence on the Inactive Regions in AlN Contour-Mode Resonators
复制标题
AlN 轮廓模式谐振器中的品质因数对非活动区域的依赖性
DOI：
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发表时间：
2015
影响因子：
2.7
通讯作者：
G. Piazza
中科院分区：
文献类型：
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作者：
C. Cassella;Navab Singh;B. Soon;G. Piazza
本文研究了AlN轮廓模谐振器（CMR）的品质因数（Q）对位于主谐振器体（有源区）和锚旁边的无应力表面之间的非有源区的特性的依赖关系。本文表明，它是可能的，以减少通过锚的最佳尺寸的宽度，这样的区域的能量泄漏。为了验证这一概念，我们建立了16个不同的配置225 MHz的AlN CMR，不同的只是谐振器的非活动区域的大小。
This paper investigates the dependence of the quality factor (Q) of AlN contour mode resonators (CMRs) on the characteristics of the inactive regions located between the main resonator body (active region) and the stress-free surfaces placed beside the anchors. This paper shows that it is possible to reduce the energy leakage through the anchors by optimally sizing the width of such regions. To validate this concept, we built 16 different configurations of 225-MHz AlN CMRs, differing just by the size of the resonator inactive regions.