Nonlinear optics in semiconductors and multiple quantum wells
Nonlinear optics in semiconductors and multiple quantum wells
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半导体和多量子阱中的非线性光学
DOI：
10.1088/0963-9659/7/2/020
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
H. Kurz
中科院分区：
文献类型：
--
作者：
T. Dekorsy;G. Segschneider;A. Kim;S. Hunsche;H. Kurz
量子阱中电子和空穴的限制使得可以制造出与激子跃迁相关的具有增强的非线性光学效应的结构。通过应用飞秒光谱学，人们有可能以高时间分辨率研究这些系统的相干和非相干性质，从而在亚皮秒的时间尺度上详细地了解光子、电子和晶格相互作用的过程。我们研究了由弛豫和热化动力学控制的多量子阱和低温生长的GaAs中的非线性光学行为。高时间和高能量分辨率的实验提供了对量子阱中价带间热化以及低温生长的GaAs中浅束缚缺陷能级的影响的详细的洞察。
The confinement of electrons and holes in quantum wells allows the fabrication of structures exhibiting enhanced nonlinear optical effects associated with excitonic transitions. By applying femtosecond spectroscopy, it has become possible to study the coherent and incoherent properties of these systems with high temporal resolution, thus gaining a detailed insight into the processes involved in the interactions of photons, electrons and the crystal lattice on a subpicosecond time scale. We present investigations of the nonlinear optical behaviour governed by the relaxation and thermalization dynamics in multiple quantum wells and in low-temperature grown GaAs. Experiments with high temporal and energetic resolution provide a detailed insight into the inter-valence-band thermalization in quantum wells and the influence of shallow bound defect levels in low-temperature grown GaAs.