Quenching of photoluminescence in conjugates of quantum dots and single-walled carbon nanotube
Quenching of photoluminescence in conjugates of quantum dots and single-walled carbon nanotube
复制标题
DOI：
10.1021/jp0657890
复制
发表时间：
2006-12-28
影响因子：
3.3
通讯作者：
Ishikawa, Mitsuru
中科院分区：
文献类型：
--
作者：
Biju, Vasudevanpillai;Itoh, Tamitake;Ishikawa, Mitsuru
基于量子点(QD)的器件元件的开发需要将量子点受控地集成到不同的光子和电子材料中。在这方面，引入规则排列量子点的方法和研究基于量子点的组装体的性质是重要的。在当前的工作中，我们报道了(1)控制结合到侧壁功能化的单壁碳纳米管(SWCNT)模板上的量子点(2)以及量子点与单壁碳纳米管(SWCNT)的结合对量子点的光致发光(PL)性质的影响。我们发现，与单壁碳纳米管共轭后，量子点的荧光强度和寿命都大大降低。从Forster共振能量转移(FRET)的角度讨论了发光强度和寿命猝灭的原因。FRET涉及基态从光激发的QD(能量供体)到附近的SWCNT(能量受体)的非辐射能量转移。这是通过改变SWCNT上量子点的密度，并将更小和更大的量子点连接到相同的SWCNT来检验的。我们从荧光强度和寿命猝灭的角度估算了QD-SWCNT的FRET效率，发现FRET与量子点在SWCNT上的密度和类型无关，但与QD-SWCNT的结合是固有的。
Development of quantum dot (QD) based device components requires controlled integration of QDs into different photonic and electronic materials. In this regard, introduction of methods for regular arrangement of QDs and investigation of properties of QD-based assemblies are important. In the current work we report (1) controlled conjugation of CdSe-ZnS QDs to sidewall-functionalized single-walled carbon nanotube (SWCNT) templates (2) and the effect of conjugation of QDs to SWCNT on the photoluminescence (PL) properties of QDs. We identified that PL intensity and lifetime of QDs are considerably reduced after conjugation to SWCNT. The origin of the quenching of the PL intensity and lifetime was discussed in terms of Forster resonance energy transfer (FRET). FRET involves nonradiative transfer of energy from a photoexcited QD (energy donor) to a nearby SWCNT (energy acceptor) in the ground state. This was examined by varying the density of QDs on SWCNT and conjugating smaller and bigger QDs to the same SWCNT. We estimated the FRET efficiency in QD-SWCNT conjugates from the quenching of the PL intensity and lifetime and identified that FRET is independent of the density and type of QDs on SWCNT but inherent to QD-SWCNT conjugates.