A monolithic field emitter array with a JFET
A monolithic field emitter array with a JFET
复制标题
具有 JFET 的单片场发射器阵列
DOI：
10.1109/ted.2002.802628
复制
发表时间：
2002
影响因子：
3.1
通讯作者：
K. Yokoo
中科院分区：
文献类型：
--
作者：
H. Shimawaki;K. Tajima;H. Mimura;K. Yokoo
本文提出了一种单片集成垂直型结型场效应晶体管（JFET）的锥形硅场发射器的新颖结构，并演示了发射器场致发射的发射控制。该方案在显示应用和可靠制造方面具有许多吸引人的优势，因为该结构既不需要额外的 JFET 面积，也不需要除离子注入之外的额外工艺。发射器的实验结果表明发射电流具有良好的可控性和稳定性。
This paper proposes a novel structure of the conical Si field emitters monolithically incorporating a vertical-type junction field effect transistor (JFET) and demonstrates the emission control in field emission from the emitters. The proposal has many attractive advantages in the display application and reliable fabrication, because the structure needs neither additional area for the JFET nor additional process except ion implantation. The experimental results of the emitters show excellent controllability and stability in the emission current.