Transient overvoltage induced failure of MOS-controlled thyristor under ultra-high di/dt condition
Transient overvoltage induced failure of MOS-controlled thyristor under ultra-high di/dt condition
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DOI：
10.23919/ispsd.2017.7988930
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发表时间：
2017-05
期刊：
影响因子：
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通讯作者：
Chao Liu;Wanjun Chen;H. Tao;Yijun Shi;Xuefeng Tang;Wuhao Gao;Qi Zhou;Zhaoji Li;Bo Zhang
中科院分区：
文献类型：
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作者：
Chao Liu;Wanjun Chen;H. Tao;Yijun Shi;Xuefeng Tang;Wuhao Gao;Qi Zhou;Zhaoji Li;Bo Zhang
In this paper, the transient overvoltage induced failure during high di/dt discharge is studied based on a cathode-short MOS controlled thyristor (CS-MCT). The intrinsic reason of this failure is that the pulse current with high di/dt flowing though the inherent parasitic cathode inductance, produces a high transient overvoltage that makes breakage of the gate oxide. The mechanism of the transient overvoltage is theoretically detailed. A simple solution is proposed by adding a second emitter lead, which is called the Kelvin connection. The Kelvin emitter greatly clamps the overvoltage at high di/dt condition, preventing gate oxide from being broken down. The advantage of Kelvin connection against the normal connection was experimentally demonstrated and validated.
