Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides
Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides
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DOI：
10.1016/j.jcrysgro.2015.12.022
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发表时间：
2016-03-15
影响因子：
1.8
通讯作者：
Sitar, Zlatko
中科院分区：
文献类型：
--
作者：
Bryan, Isaac;Bryan, Zachary;Sitar, Zlatko
AlN外延薄膜生长在两个邻位（0001）取向的天然单晶AlN衬底和AlN模板上生长邻位（0001）取向的蓝宝石开发的表面动力学框架的表面形貌控制。一个伯顿，卡布雷拉，弗兰克（BCF）理论为基础的模型制定和利用来了解蒸汽过饱和，西格玛，和基板的取向差角，α的表面动力学的依赖。使用BCF理论实验确定AlN的Al极性表面的表面能为149 +/- 8 meV/埃（2）。对于500 nm/h的生长速率和1250 ℃的温度，确定阶梯聚束开始的临界取向差角类似于0.25度。从具有2D核的表面过渡到具有双层台阶的表面需要减少σ或增加α，而抑制台阶聚束需要增加σ或减少α。(C)2016爱思唯尔B. V.保留所有权利。
AlN epitaxial thin films were grown on both vicinal (0001)-oriented native single crystal AlN substrates and AlN templates grown on vicinal (0001) -oriented sapphire to develop a surface kinetic framework for the control of surface morphology. A Burton, Cabrera, and Frank (BCF) theory-based model is formulated and utilized to understand the dependence of the surface kinetics on the vapor supersaturation, sigma, and substrate misorientation angle, alpha. The surface energy of the Al-polar surface of AlN was experimentally determined using BCF theory to be 149 +/- 8 meV/angstrom(2). The critical misorientation angle for the onset of step-bunching was determined to be similar to 0.25 degrees for a growth rate of 500 nm/h and temperature of 1250 degrees C. Transitioning from a surface with 2D nuclei to one with bilayer steps required a decrease in sigma or an increase in alpha, whereas the suppression of step-bunching required an increase in sigma or a decrease in alpha. (C) 2016 Elsevier B.V. All rights reserved.