Counter-electrode-free thin Cu film deposition based on ballistic electron injection into CuSO_4 solution from nanosilicon emitter
Counter-electrode-free thin Cu film deposition based on ballistic electron injection into CuSO_4 solution from nanosilicon emitter
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基于纳米硅发射极弹道电子注入 CuSO_4 溶液的无反电极薄膜沉积
DOI：
10.1143/jjap.50.010104
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
and N. Koshida
中科院分区：
文献类型：
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作者：
T. Ohta;B. Gelloz;and N. Koshida
研究表明，纳米晶硅（nc-Si）弹道电子发射体在金属盐溶液（如CuSO 4溶液）中起着活性电极的作用。nc-Si发射极由薄Au膜（10 nm厚）、阳极化多晶层（1 µm厚）和单晶n+-Si衬底组成。根据在标准三电极配置下通过循环伏安图测量的分析结果，在不出现电解反应的电化学窗口内的电势下清楚地观察到电子注入到溶液中的效果。当nc-Si发射极在CuSO 4溶液中单独驱动而不使用任何反电极时，在发射表面上均匀地形成多晶薄Cu膜。这可能是由于注入的高能电子在界面处优先还原Cu 2+离子。所观察到的沉积模式不同于常规电镀和化学镀。该技术是一种可替代的低温湿法工艺，将适用于各种薄金属膜的沉积。
It is shown that a nanocrystalline silicon (nc-Si) ballistic electron emitter acts as an active electrode in a metal–salt solution (such as CuSO 4 solution). The nc-Si emitter is composed of a thin Au film (10 nm thick), anodized polycrystalline layer (1 µm thick), and single-crystalline n+-Si substrate. In accordance with the results of an analysis by cyclic-voltammogram measurements under the standard three-electrode configuration, the electron injection effect into the solution is clearly observed at a potential within the electrochemical window where no electrolytic reactions appear. When the nc-Si emitter is driven alone in a CuSO 4 solution without using any counter electrodes, a polycrystalline thin Cu film is uniformly formed on the emitting surface. This is presumably due to the preferential reduction of Cu 2+ ions at the interface by injected energetic electrons. The observed deposition mode is different from both the conventional electroplating and electroless plating. This technique is an alternative low-temperature wet process that will be applicable to the deposition of various thin metal films.