Single crystal growth of UTe2 by molten salt flux method

Single crystal growth of UTe2 by molten salt flux method
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熔盐助熔剂法生长UTe2单晶

DOI:
10.1103/physrevmaterials.6.073401
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发表时间:
2022
影响因子:
3.4
通讯作者:
Haga Y.
Haga Y.
中科院分区:
材料科学3区
文献类型:
--
作者:
Sakai H.;Opletal P.;Tokiwa Y.;Yamamoto E.;Tokunaga Y.;Kambe S.;Haga Y.

文献摘要

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采用熔盐助熔剂法合成自旋三重态超导体单晶。在优化的生长条件下,过量铀的单晶体在室温下表现出超导转变,这是该化合物的最高报道。所得到的晶体显示出一个非常大的剩余电阻率比相对于室温值和一个小的剩余电子的贡献,在比热远低于。这些结果表明,In的增加可以通过减少与铀空位有关的无序来实现。熔融盐中过量的铀充当还原剂,防止四价铀变成五价,并抑制铀空位的产生。同时,相对较低的生长温度可以抑制Te的挥发。
The molten salt flux method is applied as a synthetic route for the single crystals of the spin-triplet superconductor. The single crystals under an optimized growth condition with excess uranium exhibit a superconducting transition at, which is the highestreported for this compound. The obtained crystals show a remarkably large residual resistivity ratio with respect to the room temperature value and a small residual electronic contribution in specific heat well below. These results indicate that the increase ofincan be achieved by reducing the disorder associated with uranium vacancies. The excess uranium in the molten salt acts as a reducing agent, preventing tetravalent uranium from becoming pentavalent and suppressing creation of uranium vacancies. At the same time, the relatively low growth temperature can suppress Te volatilization.