Hysteresis control by varying Ta2O5-nanoparticles concentration in PMMA-Ta2O5 bilayer gate dielectric of hybrid-organic thin film transistors
Hysteresis control by varying Ta2O5-nanoparticles concentration in PMMA-Ta2O5 bilayer gate dielectric of hybrid-organic thin film transistors
复制标题
通过改变混合有机薄膜晶体管 PMMA-Ta2O5 双层栅极电介质中 Ta2O5 纳米颗粒浓度来控制磁滞
DOI：
10.1016/j.orgel.2019.105390
复制
发表时间：
2019
影响因子：
3.2
通讯作者：
S. Wageh
中科院分区：
文献类型：
--
作者：
W. Boukhili;Betül Canımkurbey;M. Yasin;A. Al;S. Wageh
在本文中，我们报告了一系列的顶栅底接触混合有机薄膜晶体管的基础上，在玻璃基板上的溶液处理的半导体和介电层的制造。半导体有源层基于[6，6]-苯基C61-丁酸甲酯（PCBM）混合物和聚（3-己基噻吩）（P3HT）的混合物，而栅极介电层基于与各种浓度的高k Ta2O5无机颗粒混合的PMMA。实验研究表明，改变PMMA-Ta_2O_5纳米复合材料栅介质层中Ta_2O_5的浓度可以控制器件的迟滞现象。此外，随着Ta2O5无机粒子浓度的增加，电子输运也有明显的增强，这是由于电荷输运由单极型向双极型转变的结果。所制造的OTFT，具有显着的滞后变化作为PMMA-Ta2O5栅介质中的Ta2O5纳米颗粒含量的函数，证明特别有前途的考虑可能用于低成本的非易失性存储元件和传感阵列应用。
In this paper, we report the fabrication of a series of top-gate bottom-contact hybrid organic thin film transistors based on solution-processed semiconductors and dielectric layers on a glass substrate. Semiconductor active layers were based on a mixture of [6,6]-phenyl C61-butyric acid methyl ester (PCBM) mixture and poly (3-hexylthiophene) (P3HT), whereas gate dielectric layers were based on PMMA mixed with various concentrations of high-k Ta2O5inorganic particles. Experimental investigation indicated that the hysteresis phenomenon of the devices can be governed by changing of the Ta2O5concentration in PMMA-Ta2O5nanocomposites gate dielectric layer. In addition, significant enhancement of electron transport was also observed with the increase of Ta2O5inorganic particles concentration in the gate layer, which arises from the change of the charge transport from unipolar to ambipolar type. The fabricated OTFTs, with significant hysteresis variation as a function of Ta2O5nanoparticles content in PMMA-Ta2O5gate dielectrics, prove particularly promising in consideration of possible use for low-cost nonvolatile memory elements and sensing array applications.