Product Ontology and OWL Correspondence
Product Ontology and OWL Correspondence
复制标题
DOI:
10.1109/iedm.2008.4796677
复制
发表时间:
2008-01-01
期刊:
影响因子:
--
通讯作者:
Shim, J.
中科院分区:
文献类型:
--
作者:
Lee, H.;Shim, J.
A novel HfO2-based resistive memory with the TiN electrodes is proposed and fully integrated with 0.18 mu m CMOS technology. By using a thin Ti layer as the reactive buffer layer into the anodic side of capacitor-like memory cell, excellent memory performances, such as low operation current (down to 25 mu A), high on/off resistance ratio (above 1,000), fast switching speed (5 ns), satisfactory switching endurance (> 10(6) cycles), and reliable data retention (10 years extrapolation at 200 degrees C) have been demonstrated in our memory device. Moreover, the benefits of high yield, robust memory performance at high temperature (200 degrees C), excellent scalability, and multi-level operation promise its application in the next generation nonvolatile memory.Product information is a core component in an e-commerce application. Semantically enriched and precise product information may enhance the quality and effectiveness of business transactions. A recent approach is to employ the ontology to model the product information. A basis is to model a formal product ontology which can be also applicable in practice. In addition, it may be beneficial to transform or publish the product ontology in a standard ontology language. A most well-known ontology language is OWL. In this paper, we present how each modeling construct of product ontology can be translated in OWL language. We take into account of the expressiveness and complexity provided by OWL for the translation of each modeling construct, along with its practical usage in the domain.