Photoluminescence Properties of GaN Grown under Ion Flux Reduced Condition by Plasma Enhanced Molecular Beam Epitaxy
Photoluminescence Properties of GaN Grown under Ion Flux Reduced Condition by Plasma Enhanced Molecular Beam Epitaxy
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等离子体增强分子束外延在离子通量减少条件下生长的 GaN 的光致发光特性
DOI：
10.1143/jjap.35.l644
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发表时间：
1996
影响因子：
1.5
通讯作者：
Katsuhiro Akimoto Katsuhiro Akimoto
中科院分区：
文献类型：
--
作者：
S. Cho;Uitsu Tanaka;K. Hata;Takahiro Maruyama Takahiro Maruyama;Katsuhiro Akimoto Katsuhiro Akimoto
研究了氮离子辐照对等离子体增强分子束外延生长的未掺杂GaN在77 K下光致发光（PL）特性的影响。结果发现，对于在离子辐照条件下生长的外延层，PL光谱主要由在357 nm（3.47 eV）的近带边发射。然而，还观察到在567 nm（2.2 eV）附近的深能级发射，其强度相当强。另一方面，对于没有离子辐照生长的GaN薄膜，深能级发射的强度比近带边发射的强度小两个数量级。该结果表明，氮离子降低了PL特性，即，产生与大约567 nm（2.2 eV）处的发射有关的缺陷能级。
Effects of nitrogen ion irradiation on photoluminescence (PL) properties at 77 K of undoped GaN grown by plasma enhanced molecular beam epitaxy were investigated. It was found that for epitaxial layers grown under ion irradiation conditions, the PL spectra were dominated by near band-edge emission at 357 nm (3.47 eV). However, deep-level emission at around 567 nm (2.2 eV) was also observed and the intensity of which was considerably strong. On the other hand, for GaN films grown with no ion irradiation, the intensity of the deep-level emission was two orders of magnitude less than that of the near band-edge emission. This result suggests that the nitrogen ions degrade the PL properties, i.e., create defect levels relating to emission at around 567 nm (2.2 eV).