Sixteen years GaN on Si
Sixteen years GaN on Si
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DOI：
10.1002/pssb.201451656
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发表时间：
2015-05-01
影响因子：
1.6
通讯作者：
Dadgar, Armin
中科院分区：
文献类型：
--
作者：
Dadgar, Armin
GaN作为高亮度LED和大功率高频FET的基础，已经发展成为继Si之后的第二大重要半导体。虽然在20世纪80年代后期已经开发了在蓝宝石上的薄层的外延生长，但是在提供较低成本和新应用领域的Si上的生长主要受到导致破坏性回熔蚀刻的热失配和化学不相容性的阻碍。在过去的16年里，GaN on Si已经从一个小众的学术工作发展成为GaN主流技术的一部分。本文概述了Si上GaN生长的突破性进展和解决相关问题的不同方法，以及不同应用领域的概述。(C)2015 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆
GaN, the basis of high brightness LEDs and high power, high frequency FET's has developed to the second important semiconductor after Si. Although epitaxial growth of thin layers on sapphire has been developed already in the late 1980s the growth on Si, which offers lower cost and new application fields, was hampered mostly by thermal mismatch and chemical incompatibility leading to destructive melt-back etching. In the last 16 years, GaN on Si has developed from a niche academic work to part of GaN mainstream technology. This article gives an overview on the breakthrough developments and different methods to solve the problems associated with GaN growth on Si as well as an overview on the different application fields. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim