The effect of hydrogen on the network disorder in hydrogenated amorphous silicon
The effect of hydrogen on the network disorder in hydrogenated amorphous silicon
复制标题
DOI：
10.1063/1.125155
复制
发表时间：
1999-10
影响因子：
4
通讯作者：
Sanju Gupta;R. Katiyar;G. Morell;S. Z. Weisz;I. Balberg
中科院分区：
文献类型：
--
作者：
Sanju Gupta;R. Katiyar;G. Morell;S. Z. Weisz;I. Balberg
先前关于氢对各种氢化非晶硅 (a-Si:H) 材料中原子网络无序影响的拉曼散射研究得出了相互矛盾的结论。我们通过证明 a-Si:H 薄膜的表面和本体由于氢含量不同而表现不同，从而解决了这些矛盾。特别是，我们确定氢对改善原子网络的短程有序性具有相对中等的影响，但对改善原子网络的中程有序性具有深远的影响。
Previous Raman scattering studies of the effect of hydrogen on the atomic network disorder in various hydrogenated amorphous silicon (a-Si:H) materials resulted in contradicting conclusions. We resolve these contradictions by showing that the surface and the bulk of a-Si:H films can behave differently due to their different hydrogen contents. In particular, we establish that hydrogen has a relatively moderate effect in improving the short-range order but a profound effect in improving the intermediate-range order of the atomic network.