Epitaxially grown la-modified BiFeO3 magnetoferroelectric thin films -: art. no. 222903
Epitaxially grown la-modified BiFeO3 magnetoferroelectric thin films -: art. no. 222903
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DOI：
10.1063/1.1941474
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发表时间：
2005-05-30
影响因子：
4
通讯作者：
Lee, SG
中科院分区：
文献类型：
--
作者：
Lee, D;Kim, MG;Lee, SG
研究了La掺杂对BiFeO_3(BFO)基薄膜结构和磁铁电性能的影响。在SrTiO_3(001)面上，BFO基薄膜(x在0~0.15之间的Bi1-xLaxFeO_3，膜厚300 nm)均沿[001]四方对称方向外延生长。然而，La修饰逐渐将薄膜结构从单斜倾斜状态改变为非倾斜的类四方状态。扩展的x射线吸收精细结构和x射线吸收近边结构谱均显示出较强的面内压应力。室温磁化强度-场曲线表明，这些BFO基外延膜的饱和磁化强度随La掺杂程度的增加而增大。La修饰的BFO薄膜电容器在1 MHz的频率下表现出了高达4×10(10)次读/写循环的无疲劳铁电开关特性。(C)2005年美国物理研究所。
Effects of the La modification on the structure and magnetoferroelectric properties of BiFeO3 (BFO)-based films were examined. On SrTiO3 (001) planes, all the BFO-based films (for x between 0 and 0.15 in Bi1-xLaxFeO3 with the film thickness of 300 nm) were grown epitaxially along [001] direction of tetragonal symmetry. However, the La modification gradually changes the film structure from a monoclinically tilted state to a nontilted tetragonal-like state. Both extended x-ray absorption fine structure and x-ray absorption near edge structure spectra revealed the presence of a strong in-plane compressive stress. Room-temperature magnetization-field curves indicated that the saturation magnetization of these BFO-based epitaxial films increased with the degree of La modification. La-modified BFO film capacitors fabricated on SrRuO3-buffered SrTiO3 (001) substrates showed fatigue-free ferroelectric switching characteristics up to 4x10(10) read/write cycles at a frequency of 1 MHz. (c) 2005 American Institute of Physics.