Phonon transport properties depending on crystal orientation analyzed by nanoindentation using single-crystal silicon wafers
Phonon transport properties depending on crystal orientation analyzed by nanoindentation using single-crystal silicon wafers
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DOI：
10.35848/1882-0786/ac3544
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发表时间：
2021-12-01
影响因子：
2.3
通讯作者：
Takashiri, Masayuki
中科院分区：
文献类型：
--
作者：
Norimasa, Oga;Hase, Masataka;Takashiri, Masayuki
采用纳米压痕法研究了晶体取向对声子输运性质的影响。[100]取向硅的弹性模量和群速度低于[111]取向硅。声子平均自由程（MFP）表现出相反的趋势。声子输运性质的计算使用虎克定律与刚度张量。根据Si的每个晶面的原子密度的差异，[100]取向的Si的测量的声子MFP与相应的半理论值相差约13%，而[111]取向的Si的测量的声子MFP与相应的半理论值相当。(C)2021日本应用物理学会
The influences of crystal orientation on phonon transport properties were analyzed by nanoindentation using single-crystal Si wafers. The elastic moduli and group velocities of [100]-oriented Si were lower than those of [111]-oriented Si. The phonon mean free path (MFP) exhibited the opposite trend. Phonon transport properties were calculated using Hooke's law with a stiffness tensor. The measured phonon MFP of the [100]-oriented Si were approximately 13% different from the corresponding semi-theoretical values, while those of the [111]-oriented Si were comparable to the corresponding semi-theoretical values, according to the difference in atomic density of each crystal plane of Si. (C) 2021 The Japan Society of Applied Physics