20 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTs
20 kV-Class Ultra-High Voltage 4H-SiC n-IE-IGBTs
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20 kV 级超高压 4H-SiC n-IE-IGBT
DOI：
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
H. Okumura
中科院分区：
文献类型：
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作者：
A. Koyama;Y. Kiuchi;T. Mizushima;K. Takenaka;S. Matsunaga;M. Sometani;K. Nakayama;H. Ishimori;Atsuko Kimoto;M. Takei;Tomohisa Kato;Y. Yonezawa;H. Okumura
我们展示了20千伏级4 H-SiC n沟道注入和外延（IE）IGBT具有低通态电压和高阻断特性。我们在具有独立外延层的（0001）硅面上制造了n-IE-IGBT。通过寿命增强工艺，有效载流子寿命从0.9 μs显著提高到9.6 μs。我们使用IE结构来抑制表面p+阱浓度的增加，减少p+阱处的注入损伤，并且通过离子注入作为反掺杂来降低结型场效应晶体管（JFET）区域电阻。在室温下，栅压为30 V时，n-IE-IGBT在100 A/cm 2的通态电压和比导通电阻分别为8.2 V和36.9 mΩ cm 2。在45.7 μA时，阻断电压为26.8kV。
We demonstrate 20 kV-class 4H-SiC n-channel implantation and epitaxial (IE)-IGBTs having both low on-state voltage and high blocking characteristics. We fabricated n-IE-IGBTs on a (0001) silicon face with free-standing epitaxial layers. Effective carrier lifetime increased significantly from 0.9 μs to 9.6 μs by a lifetime enhancement process. We used the IE structure to suppress an increase of the surface p+-well concentration, reduce implantation damage at the p+-well, and reduce junction field effect transistor (JFET) region resistance by ion implantation as a counter doping. The n-IE-IGBT at 100 A/cm2 on-state voltage and specific differential on-resistance was 8.2 V and 36.9 mΩcm2, respectively, at room temperature with a 30 V gate voltage. The blocking voltage was 26.8 kV at 45.7 μA.