Two-dimensional profiling of shallow junctions in Si metal-oxide- semiconductor structures using scanning tunneling spectroscopy and transmission electron microscopy
Two-dimensional profiling of shallow junctions in Si metal-oxide- semiconductor structures using scanning tunneling spectroscopy and transmission electron microscopy
复制标题
使用扫描隧道光谱和透射电子显微镜对硅金属氧化物半导体结构中的浅结进行二维分析
DOI：
10.1063/1.361069
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发表时间：
1996
影响因子：
3.2
通讯作者：
J. Halbout
中科院分区：
文献类型：
--
作者：
E. Yu;K. Barmak;P. Ronsheim;Matthew B. Johnson;P. McFarland;J. Halbout
我们使用截面扫描隧道光谱和截面透射电子显微镜对Si金属氧化物半导体结构中的浅pn结进行了二维分析。在隧道光谱测量中，从金属氧化物半导体结构的p型、n型和耗尽区获得的电流-电压谱之间观察到明显的差异;从隧道光谱生成的电流图像显示了pn结的轮廓，在横向和垂直方向上的空间分辨率均为10 nm左右。发现计算的隧穿电流-电压谱与从结的p型和n型区域获得的实验谱中观察到的差异一致。扫描隧道光谱获得的结剖面也进行了比较，以透射电子显微镜图像的化学划定的交界处和测量的垂直掺杂剂分布获得的二次…
We have used cross‐sectional scanning tunneling spectroscopy and cross‐sectional transmission electron microscopy to perform two‐dimensional profiling of shallow pn junctions in Si metal‐oxide‐semiconductor structures. In the tunneling spectroscopy measurements, clear differences were observed between current‐voltage spectra obtained from p‐type, n‐type, and depleted regions of the metal‐oxide‐semiconductor structures; current images generated from the tunneling spectra revealed the profiles of the pn junctions with spatial resolution in both the lateral and vertical directions on the order of 10 nm. Calculated tunneling current‐voltage spectra were found to be consistent with observed differences in experimental spectra obtained from p‐type and n‐type regions of the junctions. Junction profiles obtained by scanning tunneling spectroscopy have also been compared to transmission electron microscopy images of chemically delineated junctions and measurements of vertical dopant profiles obtained by secondary ...