Near threshold electron damage in aluminium: Purity effects
Near threshold electron damage in aluminium: Purity effects
复制标题
铝中的近阈值电子损伤:纯度效应
DOI:
10.1080/00337577408241463
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发表时间:
1974
影响因子:
1
通讯作者:
A. Wolfenden
中科院分区:
文献类型:
--
作者:
A. Wolfenden
In recent experiments’ foils of zone-refined aluminum, both with and without preinjected helium, were bombarded with electrons in the electron microscope operating at voltages in the range 150 to 200 kV. Electron damage was produced in the helium-doped aluminum after about 90 min irradiation time at 150 kV. No damage was seen at 150 kV in the uninjected aluminum for irradiation times over 4 hr. Since the concensus of opinion2-’for aluminum is that the threshold energy for atomic displacement, Td, is near 16 eV (-170 keV incident electron beam energy), the observation of electron damage at 150 kV (rd-14 ev) constituted evidence for “sub-threshold” events. We have extended our microscope experiments to cover electron irradiation of less pure aluminum at voltages in the range 150 to 200 kV. Evidence is presented for sub-threshold damage at 1.50 kV in 99.996 wt% pure aluminum preinjected with a few ppm helium. The results are compared with those for high-purity aluminum.Alcoa was rolled to 0.013 cm thickness, cut into strips measuring 3.8 x 0.63 cm and annealed for 30 min at 200 C. Some of the strips were injected with alpha particles in a cyclotron to about 10 at. ppm helium (calculated value) with a uniforfi distribution, as described elsewhere. 6 Pieces of both uninjected and injected aluminum were examined and electron irradiated in a Hitachi 200E electron microscope operating at 150, 175, or 200 kV. Other details of the microscope and its operation have been given already.’Bombardment times up to about 2 hr