Properties of highly (100) oriented Pb(Mg1/3,Nb2/3)O3-PbTiO3 films on LaNiO3 bottom electrodes
Properties of highly (100) oriented Pb(Mg1/3,Nb2/3)O3-PbTiO3 films on LaNiO3 bottom electrodes
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DOI：
10.1063/1.2822421
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发表时间：
2007-12-03
影响因子：
4
通讯作者：
Chu, J. H.
中科院分区：
文献类型：
--
作者：
Li, Y. W.;Hu, Z. G.;Chu, J. H.
在LaNiO3 （LNO）包覆的硅衬底上制备了70%Pb(Mg-1/3,Nb-2/3)O-3-30%PbTiO3 （PMNT）薄膜。导电LNO薄膜作为PMNT薄膜生长的种子层，抑制了焦绿石相的形成，诱导了钙钛矿PMNT薄膜的高（100）择优取向。与在铂底电极上生长的PMNT膜相比，在LNO上生长的PMNT膜的铁电性能得到了提高。PMNT薄膜复介电常数对LNO的频率依赖是极化弛豫和氧空位运动的共同结果，可以分别用包含Debye和通用介电响应模型的函数来拟合。(c) 2007年美国物理学会。
The 70%Pb(Mg-1/3,Nb-2/3)O-3-30%PbTiO3 (PMNT) films have been fabricated on LaNiO3 (LNO) coated silicon substrate. The conductive LNO films act as a seed layer for the growth of PMNT films, which depresses the formation of pyrochlore phase and induces the high (100) preferred orientation of perovskite PMNT films. Compared with the PMNT films grown on platinum bottom electrode, the ferroelectric properties of PMNT films grown on LNO are enhanced. The frequency dependence of complex permittivity from PMNT films on LNO is the conjunct result of polarization relaxation and movement of oxygen vacancy, which can be fitted by the function containing Debye and universal dielectric response models, respectively. (c) 2007 American Institute of Physics.