A laser-assisted chlorination process for reversible writing of doping patterns in graphene
A laser-assisted chlorination process for reversible writing of doping patterns in graphene
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DOI：
10.1038/s41928-022-00801-2
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发表时间：
2022-08-01
影响因子：
34.3
通讯作者：
Grigoropoulos, Costas P.
中科院分区：
文献类型：
--
作者：
Rho, Yoonsoo;Lee, Kyunghoon;Grigoropoulos, Costas P.
化学掺杂可以用来控制二维范德华材料中载流子的极性和浓度。然而，传统的基于置换掺杂或表面功能化的方法由于结构无序导致电迁移率下降，最大掺杂浓度由掺杂剂的溶解度极限决定。在这里，我们展示了一个可逆的激光辅助氯化过程可以用来在石墨烯单分子膜中产生高掺杂浓度(高于3×10(13)cm(-2))，而迁移率下降最小。这种方法使用两个激光-具有不同的光子能量和几何配置-专为氯化和随后的氯去除而设计，允许写入和擦除高度掺杂的图案，而不会损害石墨烯。为了说明我们的方法的能力，我们使用它来创建基于石墨烯的光电探测器的可重写光活性结。两个不同能量和配置的激光可以通过氯化和除氯来可逆地掺杂石墨烯，从而制造出可重写的石墨烯光电探测器。
Chemical doping can be used to control the charge-carrier polarity and concentration in two-dimensional van der Waals materials. However, conventional methods based on substitutional doping or surface functionalization result in the degradation of electrical mobility due to structural disorder, and the maximum doping density is set by the solubility limit of dopants. Here we show that a reversible laser-assisted chlorination process can be used to create high doping concentrations (above 3 x 10(13) cm(-2)) in graphene monolayers with minimal drops in mobility. The approach uses two lasers-with distinct photon energies and geometric configurations-that are designed for chlorination and subsequent chlorine removal, allowing highly doped patterns to be written and erased without damaging the graphene. To illustrate the capabilities of our approach, we use it to create rewritable photoactive junctions for graphene-based photodetectors.Two laser beams with different energies and configurations can be used to reversibly dope graphene via chlorination and chlorine removal, allowing rewritable graphene photodetectors to be fabricated.