Defining Conditions for the Etching of Silicon in an Inductive Coupled Plasma Reactor
Defining Conditions for the Etching of Silicon in an Inductive Coupled Plasma Reactor
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定义电感耦合等离子体反应器中硅蚀刻的条件
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
P. O’Brien
中科院分区：
文献类型：
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作者：
H. Ashraf;J. Bhardwaj;E. Guibarra;S. Hall;J. Hopkins;A. Hynes;I. Johnston;L. Lea;S. McAuley;G. Nicholls;P. O’Brien
在高密度氟化等离子体工艺中，从根本上限制硅刻蚀的机制还知之甚少。为了提高我们对这类系统性能极限的理解，我们研究了用SF6在感应耦合等离子体反应器中刻蚀硅片的方法。系统的经验研究使我们能够定义许多控制刻蚀速度的实验参数。刻蚀对温度的依赖性很小，表明刻蚀过程是扩散受限的过程。控制蚀刻速率的参数的系统变化：反应器中的总压、流量、反应物质的分压和提供给放电的射频功率使我们能够准确地定义系统的性能。实验分离了蚀刻过程中的物理和化学成分，支持了蚀刻是由电中性物质主导的结论。这些不同的结果是根据公认的含有SF6的等离子体中反应化学反应的模型来解释的。MEMS行业对刻蚀工艺提出了越来越高的要求，需要在高刻蚀速率下实现高度的各向异性和关键的尺寸控制。概述的方法使我们能够开发有效的策略，以发展改进的系统，以实现硅的高速等离子体刻蚀。
In high-density fluorinated plasma processes, the mechanisms that fundamentally limit the etching of silicon are poorly understood. In an effort to improve our understanding of limits to the performance of such systems, the etching of silicon wafers in an inductive coupled plasma reactor, using SF 6 , has been studied. A systematic empirical investigation has allowed us to define many of the experimental parameters that control the etching rate. There is little temperature dependence of etching which suggests a diffusion limited process. Systematic variation of parameters controlling the rate of etching: total pressure in the reactor, flow rate, partial pressure of reactive species and the rf power supplied to the discharge enable us to accurately define the performance of the system. Experiments, which segregate the physical and chemical components of the etching process, support the conclusion that etching is dominated by electrically neutral species. These various results are interpreted in terms of accepted models for the reactive chemistry in plasmas containing SF 6 . The MEMS industry is placing ever greater demands on etching processes, and there is a need to achieve the high degrees of anisotropy, and critical dimension control, at high etch-rates. The approach outlined allows us to develop effective strategies for evolving improved systems for the high rate plasma etching of silicon.