Enhanced luminescent and electrical properties of hydrogen-plasma ZnO nanorods grown on wafer-scale flexible substrates
Enhanced luminescent and electrical properties of hydrogen-plasma ZnO nanorods grown on wafer-scale flexible substrates
复制标题
DOI：
10.1063/1.1904715
复制
发表时间：
2005-05-02
影响因子：
4
通讯作者：
Chen, SY
中科院分区：
文献类型：
--
作者：
Lin, CC;Chen, HP;Chen, SY
在4In衬底上生长了取向良好的氢等离子体氧化锌纳米棒，实现了光电子特性。用氧化锌薄膜缓冲的柔性有机基板。观察到H-2等离子体处理后，相对强度比(紫外光发射和深能级发射)的光致发光(PL)特性提高了60倍。X射线光电子能谱分析表明，纳米棒发光性能的提高主要归因于缺陷钝化和氢离子吸收对纳米棒表面的修饰。然而，H-2等离子体氧化锌纳米棒的光致发光光谱可以通过热退火过程恢复到氧化锌纳米棒的原始状态。电流-电压测量表明，经过H-2等离子体处理的n型氧化锌纳米棒具有比非等离子体氧化锌纳米棒高约5-6个数量级的电导率。(C)2005年美国物理研究所。
Photoelectronic characteristics are performed in well-aligned hydrogen-plasma ZnO nanorods grown on 4 in. flexible organic substrates buffered with ZnO film. Enhancement of photoluminescence (PL) properties due to H-2 plasma treatment by a factor of 60 times for relative intensity ratio (ultraviolet emission to deep level emission) has been observed. X-ray photoelectron spectroscopy analysis reveals that the enhanced PL property is attributed to both defect passivation and modification on the surface region of ZnO nanorods due to the absorption of hydrogen ions. However, the PL spectra of H-2 plasma ZnO nanorods can be restored to the original state of ZnO nanorods by thermal annealing process. The current-voltage measurements suggest that the n-type ZnO nanorods with H-2 plasma treatment present a higher conductivity of about 5-6 orders of magnitude than the nonplasma ZnO nanorods. (c) 2005 American Institute of Physics.