Electrical contacts to carbon nanotubes down to 1nm in diameter
Electrical contacts to carbon nanotubes down to 1nm in diameter
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DOI：
10.1063/1.2108127
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发表时间：
2005-05
影响因子：
4
通讯作者：
Woong Kim;A. Javey;R. Tu;Jie Cao;Qian Wang;H. Dai
中科院分区：
文献类型：
--
作者：
Woong Kim;A. Javey;R. Tu;Jie Cao;Qian Wang;H. Dai
铑（Rh）被发现与钯（Pd）类似，在与直径d> 1.6nm的单壁碳纳米管（SWNT）形成近欧姆电接触方面。Rh或Pd与d<1.6nm的半导体单壁碳纳米管（S-SWNT）之间存在不可忽略的正肖特基势垒（SB）。在Rh和Pd接触的情况下，SWNT场效应晶体管的特性和接触处的SB高度在很大程度上是基于SWNT直径可预测的，而器件之间没有随机变化。令人惊讶的是，与金属SWNT（M-SWNT）的电接触似乎也是直径依赖性的，特别是对于小SWNT。欧姆接触对于直径小于1.0nm的M-SWNTs来说是困难的，这可能是由于隧道势垒，隧道势垒是由于接触金属对非常小直径的SWNTs的高化学反应性而产生的大扰动。
Rhodium (Rh) is found similar to Palladium (Pd) in making near-Ohmic electrical contacts to single-walled carbon nanotubes (SWNTs) with diameters d>∼1.6nm. Non-negligible positive Schottky barriers (SBs) exist between Rh or Pd and semiconducting SWNTs (S-SWNTs) with d<∼1.6nm. With Rh and Pd contacts, the characteristics of SWNT field-effect transistors and SB heights at the contacts are largely predictable based on the SWNT diameters, without random variations among devices. Surprisingly, electrical contacts to metallic SWNTs (M-SWNTs) also appear to be diameter dependent especially for small SWNTs. Ohmic contacts are difficult for M-SWNTs with diameters ⩽∼1.0nm possibly due to tunnel barriers resulted from large perturbation of contacting metal to very small diameter SWNTs due to high chemical reactivity of the latter.