EFFECTS OF GAMMA-RADIATION ON THRESHOLD VOLTAGES OF TRENCH ISOLATED CMOS
EFFECTS OF GAMMA-RADIATION ON THRESHOLD VOLTAGES OF TRENCH ISOLATED CMOS
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DOI：
10.1049/el:19890775
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发表时间：
1989-08-17
影响因子：
1.1
通讯作者：
FOSTER, DJ
中科院分区：
文献类型：
--
作者：
MEDHURST, PL;FOSTER, DJ
描述了γ辐射对沟槽隔离CMOS晶体管和侧壁寄生器件的影响。低剂量饱和观察偏置设备，这是由于低体积的氧化膜固有的沟槽技术。NMOS晶体管中产生的漏电流被观察到饱和与累积照射。
Gamma radiation effects on trench isolated CMOS transistors and sidewall parasitic devices are described. Low dose saturation was observed for biased devices, this being attributable to low volume oxide films inherent to trench technology. Leakage currents generated in NMOS transistors were observed to saturate with cumulative irradiation.