Deduction of the temperature-dependent structure of the four-layer intermediate smectic phase using resonant X-ray scattering.
Deduction of the temperature-dependent structure of the four-layer intermediate smectic phase using resonant X-ray scattering.
复制标题
使用共振 X 射线散射推论四层中间近晶相的温度依赖性结构。
DOI：
10.1140/epje/i2007-10189-0
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
Brimicombe PD
中科院分区：
文献类型：
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作者：
Brimicombe PD
利用共振X射线散射研究了含硒原子的反铁电液晶材料和高手性掺杂剂的二元混合物。该混合物具有非常宽的四层中间近晶相，其结构在16K的温度范围内进行了研究。共振X射线散射数据的分析允许作为温度的函数的螺旋螺距和失真角的精确测量。前者随着SmC * 相的接近而迅速减小，而后者在8°±3°的温度范围内保持不变。我们还观察到，在这种混合物中，螺旋螺距和重复的四层结构的晶胞的意义是相反的，并且在所研究的温度范围内没有螺距反转。
A binary mixture of an antiferroelectric liquid-crystal material containing a selenium atom and a highly chiral dopant is investigated using resonant X-ray scattering. This mixture exhibits a remarkably wide four-layer intermediate smectic phase, the structure of which is investigated over a temperature range of 16K. Analysis of the resonant X-ray scattering data allows accurate measurement of both the helicoidal pitch and the distortion angle as a function of temperature. The former decreases rapidly as theSmC*phase is approached, whilst the latter remains constant over the temperature range studied at 8°±3°. We also observe that the senses of the helicoidal pitch and the unit cell of the repeating four-layer structure are opposite in this mixture and that there is no pitch inversion over the temperature range studied.