Influence of Cu metal on the domain structure and carrier mobility in single-layer graphene
Influence of Cu metal on the domain structure and carrier mobility in single-layer graphene
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DOI：
10.1016/j.carbon.2012.01.030
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发表时间：
2012-05
期刊：
影响因子：
10.9
通讯作者：
C. Orofeo;H. Hibino;K. Kawahara;Yui Ogawa;M. Tsuji;K. Ikeda;S. Mizuno;H. Ago
中科院分区：
文献类型：
--
作者：
C. Orofeo;H. Hibino;K. Kawahara;Yui Ogawa;M. Tsuji;K. Ikeda;S. Mizuno;H. Ago
我们证明了通过常压化学气相沉积生长的单层石墨烯的畴结构强烈依赖于Cu催化剂的结晶度。低能电子显微镜分析表明，使用Cu箔生长的石墨烯给出了具有多个域边界的小且错误取向的石墨烯域。另一方面，由于石墨烯六边形的统一取向，在沉积在蓝宝石上的异质外延Cu（111）膜上生长的石墨烯中没有观察到明显的畴边界。畴结构的差异与Cu金属的晶面和晶粒结构的差异相关。在异质外延Cu膜上生长的石墨烯膜表现出比在Cu箔上生长的石墨烯膜高得多的载流子迁移率。
We demonstrate that domain structure of single-layer graphene grown by ambient pressure chemical vapor deposition is strongly dependent on the crystallinity of the Cu catalyst. Low energy electron microscopy analysis reveals that graphene grown using a Cu foil gives small and mis-oriented graphene domains with a number of domain boundaries. On the other hand, no apparent domain boundaries are observed in graphene grown over a heteroepitaxial Cu(111) film deposited on sapphire due to unified orientation of graphene hexagons. The difference in the domain structures is correlated with the difference in the crystal plane and grain structure of the Cu metal. The graphene film grown on the heteroepitaxial Cu film exhibits much higher carrier mobility than that grown on the Cu foil.