Comparison of Rayleigh and Sezawa wave modes in ZnO-SiO/sub 2/-Si structures
Comparison of Rayleigh and Sezawa wave modes in ZnO-SiO/sub 2/-Si structures
复制标题
ZnO-SiO/sub 2/-Si 结构中瑞利波和 Sezawa 波模式的比较
DOI：
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发表时间：
1991
期刊：
影响因子：
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通讯作者：
S. Hunklinger
中科院分区：
文献类型：
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作者：
A. Weber;G. Weiss;S. Hunklinger
采用射频磁控溅射技术制备了ZnO/SiO2/Si多晶声表面波（SAW）器件，薄膜厚度h为0.3 ~ 15 μ m。X射线衍射，摇摆曲线，和SEM显微镜被用来表征ZnO层。作者研究了三种不同类型的器件的传播损耗和耦合系数：ZnO层的瑞利波器件h/ lambda约=0.4和h/ lambda约=0.04，和Sezawa波器件。在80和600 MHz之间的频率范围内进行测量。据观察，具有薄ZnO层的瑞利波器件具有比其他两种类型的SAW器件低得多的传播损耗的频率依赖性。在550 MHz下，具有薄ZnO层的器件表现出仅7 dB/cm的传播损耗，相比之下，具有厚ZnO层的瑞利波器件为24 dB/cm，Sezawa波器件为14 dB/cm。相速度和耦合系数作为膜厚的函数进行了检查，并与理论值进行了比较。<<ETX>>
ZnO-SiO/sub 2/-Si surface acoustic wave (SAW) devices with polycrystalline ZnO films of high quality at a thickness h between 0.3 and 15 mu m were fabricated using the RF-magnetron bias sputtering technique. X-ray diffraction, rocking curves, and SEM microscopy were used to characterize the ZnO layers. The authors studied the propagation loss and the coupling coefficient of three different types of devices: Rayleigh wave devices with ZnO layers h/ lambda approximately=0.4 and h/ lambda approximately=0.04, and Sezawa wave devices. Measurements were performed in the frequency range between 80 and 600 MHz. It was observed that Rayleigh wave devices with a thin ZnO layer have a much lower frequency dependence of the propagation loss than the other two types of SAW devices. At 550 MHz, devices with thin ZnO layers exhibit a propagation loss of only 7 dB/cm, compared to 24 dB/cm for Rayleigh wave devices with a thick ZnO layer, and 14 dB/cm for the Sezawa wave devices. Phase velocity and coupling coefficient as a function of film thickness were examined and are compared with theoretical values.<<ETX>>