Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy
Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy
复制标题
通过分子束外延生长与 InP 晶格匹配的 InAlAsSb 中的空间间接辐射复合
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
M. González
中科院分区：
文献类型：
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作者：
L. Hirst;M. Lumb;J. Abell;C. T. Ellis;J. Tischler;I. Vurgaftman;J. Meyer;R. Walters;M. González
本文报道了四元合金InAlAsSb的光致发光谱研究。通过分子束外延生长与InP晶格匹配的样品，并比较450 °C和325 °C的两种不同生长温度。内插带隙能量表明，这种合金的发展将扩展可获得的直接带隙的范围内的材料晶格匹配的InP高达1.81 eV的能量。然而，对于在两个温度下生长的样品，观察到的PL发射的峰值能量非常低，其中450 °C样品显示出与预期带隙的较大偏差。积分PL强度（I）与I/Pk依赖性的拟合（其中P是入射功率密度）分别产生450 °C和325 °C样品的特征系数k = 1.05和1.18。这表明来自两个样品的PL由激子复合主导。峰值发射能量随P的变化呈蓝移，沿着随温度变化呈S形。
A photoluminescence (PL) spectroscopy study of the bulk quaternary alloy InAlAsSb is presented. Samples were grown lattice-matched to InP by molecular beam epitaxy and two different growth temperatures of 450 °C and 325 °C were compared. Interpolated bandgap energies suggest that the development of this alloy would extend the range of available direct bandgaps attainable in materials lattice-matched to InP to energies as high as 1.81 eV. However, the peak energy of the observed PL emission is anomalously low for samples grown at both temperatures, with the 450 °C sample showing larger deviation from the expected bandgap. A fit of the integrated PL intensity (I) to an I∝Pk dependence, where P is the incident power density, yields characteristic coefficients k = 1.05 and 1.18 for the 450 °C and 325 °C samples, respectively. This indicates that the PL from both samples is dominated by excitonic recombination. A blue-shift in the peak emission energy as a function of P, along with an S-shaped temperature depe...