Dimension Engineering of High-Quality InAs Nanostructures on a Wafer Scale
Dimension Engineering of High-Quality InAs Nanostructures on a Wafer Scale
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晶圆级高质量 InAs 纳米结构的尺寸工程
DOI：
10.1021/acs.nanolett.8b04561
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发表时间：
2019-03-01
期刊：
影响因子：
10.8
通讯作者：
Zhao, Jianhua
中科院分区：
文献类型：
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作者：
Pan, Dong;Wang, Ji-Yin;Zhao, Jianhua
低维窄带隙III-V半导体是下一代高性能纳米电子学、纳米光子学和量子器件的关键组成部分。要实现这些不同的应用，需要一种有效的方法来控制合成过程中的材料尺寸，并以完美的结晶度、重复性、低成本和出色的电子和光电性能大规模生产这些材料。尽管在一维和二维窄带隙III-V半导体合成方面取得了进展，但在能够满足所有这些要求的可靠方法方面的进展是有限的。在这里，我们展示了一种方法，通过控制催化剂合金的偏析，使用分子束外延技术，精确地控制InAs的尺寸，从一维纳米线到晶片规模的独立二维纳米片，具有高度的结晶度和优异的电学和光学性能。在我们的方法中，可以通过银铟合金偏析直接从一维InAs纳米线获得二维InAs纳米片，这比以往报道的方法，如传统的缓冲技术和选区外延生长方法要容易得多。详细的电子显微镜研究表明，催化剂合金的偏析是InAs从一维纳米线到二维纳米片甚至三维复杂十字的维相变的根源。利用这种方法，我们发现可以在不同的衬底上生长晶片尺度的独立InAs纳米片，包括Si、MgO、蓝宝石、GaAs等。高温生长的InAs纳米片是纯相单晶体，具有高的电子迁移率和长的时间分辨太赫兹动力学寿命。我们的工作将为有效控制低维III-V半导体的尺寸开辟一条概念性的新的通用技术路线。它还可以实现工业规模的独立纳米片设备的低成本制造。
Low-dimensional narrow-band-gap III-V semiconductors are key building blocks for the next generation of high-performance nanoelectronics, nanophotonics, and quantum devices. Realizing these various applications requires an efficient methodology that enables the material dimensional control during the synthesis process and the mass production of these materials with perfect crystallinity, reproducibility, low cost, and outstanding electronic and optoelectronic properties. Although advances in one- and two-dimensional narrow-band-gap III-V semiconductors synthesis, the progress toward reliable methods that can satisfy all of these requirements has been limited. Here, we demonstrate an approach that provides a precise control of the dimension of InAs from one-dimensional nanowires to wafer-scale free-standing two-dimensional nanosheets, which have a high degree of crystallinity and outstanding electrical and optical properties, using molecular-beam epitaxy by controlling catalyst alloy segregation. In our approach, two-dimensional InAs nanosheets can be obtained directly from one-dimensional InAs nanowires by silver-indium alloy segregation, which is much easier than the previously reported methods, such as the traditional buffering technique and select-area epitaxial growth. Detailed transmission electron microscopy investigations provide solid evidence that the catalyst alloy segregation is the origination of the InAs dimensional transformation from one-dimensional nanowires to two-dimensional nanosheets and even to three-dimensional complex crosses. Using this method, we find that the wafer-scale free-standing InAs nanosheets can be grown on various substrates including Si, MgO, sapphire, GaAs, etc. The InAs nanosheets grown at high temperature are pure-phase single crystals and have a high electron mobility and a long time-resolved terahertz kinetics lifetime. Our work will open up a conceptually new and general technology route toward the effective controlling of the dimension of the low-dimensional III-V semiconductors. It may also enable the low-cost fabrication of free-standing nanosheet-based devices on an industrial scale.