Uniform Ti-doped Sb2Te3 materials for high-speed phase change memory applications
Uniform Ti-doped Sb2Te3 materials for high-speed phase change memory applications
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DOI：
10.1063/1.4863430
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发表时间：
2014-02
影响因子：
4
通讯作者：
Min Zhu;Liangcai Wu;F. Rao;Zhitang Song;K. Ren;Xinglong Ji;Sannian Song;Dongning Yao;S. Feng
中科院分区：
文献类型：
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作者：
Min Zhu;Liangcai Wu;F. Rao;Zhitang Song;K. Ren;Xinglong Ji;Sannian Song;Dongning Yao;S. Feng
与纯Sb2Te3相比，Ti0.32Sb2Te3 （TST）相变材料具有更大的电阻比、更高的结晶温度和更好的热稳定性。迁移率的急剧下降是造成非晶片和晶片电阻增加的原因。TST薄膜均匀的晶体结构有利于提高其耐久性能。基于tst的相变存储器件的Set和Reset工作电压远低于传统的基于ge2sb2te5的相变存储器件。值得注意的是，该器件具有极快的设置操作速度（~ 6 ns）。此外，具有稳定的Set和Reset电阻，可获得高达1 × 106个编程周期。
Compared with pure Sb2Te3, Ti0.32Sb2Te3 (TST) phase change material has larger resistance ratio, higher crystallization temperature and better thermal stability. The sharp decrease in mobility is responsible for the increasing amorphous and crystalline sheet resistance. The uniform crystalline structure of TST film is very benefit for the endurance characteristic. The Set and Reset operation voltages for TST-based phase change memory device are much lower than those of conventional Ge2Sb2Te5-based one. Remarkably, the device presents extremely rapid Set operation speed (∼6 ns). Furthermore, up to 1 × 106 programming cycles are obtained with stable Set and Reset resistances.