Enhanced low field magnetoresistance in germanium and silicon-diode combined device at room temperature
Enhanced low field magnetoresistance in germanium and silicon-diode combined device at room temperature
复制标题
室温下锗和硅二极管组合器件中增强的低场磁阻
DOI：
10.1063/1.4901970
复制
发表时间：
2014-11-10
影响因子：
4
通讯作者：
Luo, Zhaochu
中科院分区：
文献类型：
--
作者：
Chen, Jiaojiao;Zhang, Xiaozhong;Luo, Zhaochu
本文报道了在锗硅二极管组合器件中获得的室温小场（20mT）大磁电阻效应（接近200%）。这种增强的磁电阻效应归因于锗的几何形状和硅二极管的非线性电输运特性。建立了二维有限元模型，模拟了实验结果。我们的工作为锗硅材料的低场磁电阻器件的研制铺平了道路。(C)2014 AIP Publishing LLC.
We report on a large (similar to 200%), room-temperature, small field (20mT) magnetoresistance effect in germanium and silicon-diode combined device. This enhanced magnetoresistance is attributed to geometry of germanium and nonlinear electro-transport characteristic of silicon-diode. A two-dimensional finite element model is built to simulate the experimental results. Our work may pave a way to develop low field magnetoresistance devices from germanium and silicon. (C) 2014 AIP Publishing LLC.