Stress in electroplated gold on silicon substrates and its dependence on cathode agitation
Stress in electroplated gold on silicon substrates and its dependence on cathode agitation
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DOI：
10.1016/j.mee.2013.05.019
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发表时间：
2013-12-01
影响因子：
2.3
通讯作者：
Yeatman, Eric M.
中科院分区：
文献类型：
--
作者：
Pu, Suan Hui;Holmes, Andrew S.;Yeatman, Eric M.
研究了阴极搅拌对镀金层残余应力的影响。使用定制的电镀池，将周期性往复运动施加到电镀有软金的硅基板上。使用市售的亚硫酸金溶液，在3.0 mA/cm（2）的电流密度和50 ℃的浴温下沉积存款0.6 μ m厚的金膜。通过将阴极搅拌的速度从0增加到5cm/s，压应力的大小从-64MPa减小到-9MPa。结果表明，阴极搅拌显着改变了电解槽内的质量传输，并可以作为一种方法的应力控制在金电镀。这一发现对于需要精确应力控制的微电子和微系统中的电镀应用具有潜在意义。(C)2013作者Elsevier B. V.出版，保留所有权利。
The influence of cathode agitation on the residual stress of electroplated gold has been investigated. Using a custom-built plating cell, a periodic, reciprocating motion was applied to silicon substrates that were electroplated with soft gold. A commercially available gold sulfite solution was used to deposit the 0.6 mu m thick gold films using a current density of 3.0 mA/cm(2) and a bath temperature of 50 degrees C. By increasing the speed of cathode agitation from 0 to 5 cm/s, the magnitude of the compressive stress decreased from -64 to -9 MPa. The results suggest that cathode agitation significantly alters the mass transport within the electrolytic cell and can be used as a method of stress control in gold electroplating. This finding is potentially significant for plating applications in microelectronics and microsystems that require precise stress control. (C) 2013 The Authors. Published by Elsevier B.V. All rights reserved.